ZXMN3A02N8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

9A

Transistor Application :

SWITCHING

Power Dissipation :

2.5W

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Continuous Drain Current (ID) :

9A

Published :

2006

Weight :

73.992255mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Current Rating :

9A

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Additional Feature :

LOW THRESHOLD

Turn On Delay Time :

3.9 ns

Rds On (Max) @ Id, Vgs :

25m Ω @ 12A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.3A Ta

Turn-Off Delay Time :

35 ns

Drain-source On Resistance-Max :

0.025Ohm

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.56W Ta

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

26.8nC @ 10V

Number of Terminations :

8

Rise Time :

5.5ns

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Qualification Status :

Not Qualified

Fall Time (Typ) :

5.5 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)