ZXMN3A01ZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-F3

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Turn On Delay Time :

2.6 ns

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

186pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Power Dissipation-Max :

970mW Ta

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Terminal Finish :

Matte Tin (Sn)

Resistance :

120mOhm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

2.2A

ECCN Code :

EAR99

Additional Feature :

High Reliability

JESD-609 Code :

e3

Published :

2012

Number of Channels :

1

Package / Case :

TO-243AA

Factory Lead Time :

17 Weeks

Mount :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

3.6 ns

Turn-Off Delay Time :

13.5 ns

Rise Time :

4.1ns

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Number of Terminations :

3

Vgs (Max) :

±20V

Terminal Position :

Single

REACH SVHC :

No SVHC

Weight :

130.492855mg

FET Type :

N-Channel

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

3.3A