ZXMN3A01FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Published :

2015

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Surface Mount :

yes

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 10V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

625mW Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

JESD-30 Code :

R-PDSO-G3

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.12Ohm

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

1.8A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING