ZXMN3A01FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 10V

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

1.8A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Power Dissipation-Max :

625mW Ta

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.12Ohm

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Published :

2015

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

1.8A Ta

Terminal Form :

Gull wing

JESD-30 Code :

R-PDSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Package / Case :

TO-236-3, SC-59, SOT-23-3