ZXMN3A01E6TA
- Mfr.Part #
- ZXMN3A01E6TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 2.4A SOT-23-6
- Stock
- 4,628
- In Stock :
- 4,628
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 120mOhm
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 2.8A
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 1.1W Ta
- Terminal Form :
- Gull wing
- Power Dissipation :
- 1.7W
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 190pF @ 25V
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Ta
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 14.996898mg
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Height :
- 1.3mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 2.3ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 2.5A, 10V
- Pin Count :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Published :
- 2006
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Width :
- 1.8mm
- Factory Lead Time :
- 17 Weeks
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 3.9nC @ 10V
- Turn On Delay Time :
- 1.7 ns
- Package / Case :
- SOT-23-6
- Drain Current-Max (Abs) (ID) :
- 2.4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time (Typ) :
- 2.3 ns
- Turn-Off Delay Time :
- 6.6 ns
- Continuous Drain Current (ID) :
- 3A
- Number of Elements :
- 1
- Number of Pins :
- 6
- Length :
- 3.1mm
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- ZXMN3A01E6TA

N-Channel Tape & Reel (TR) 120m Ω @ 2.5A, 10V ±20V 190pF @ 25V 3.9nC @ 10V SOT-23-6
ZXMN3A01E6TA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 190pF @ 25V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2.4A.When the device is turned off, a turn-off delay time of 6.6 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 1.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
ZXMN3A01E6TA Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 6.6 ns
ZXMN3A01E6TA Applications
There are a lot of Diodes Incorporated
ZXMN3A01E6TA applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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