ZXMN2F34FHTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

4.2 ns

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

4A

Weight :

7.994566mg

Packaging :

Tape and Reel (TR)

Threshold Voltage :

800mV

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

FET Type :

N-Channel

Published :

2008

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Resistance :

60mOhm

Rise Time :

4.2ns

Power Dissipation :

1.4W

Power Dissipation-Max :

950mW Ta

Length :

3.04mm

Height :

1.02mm

Width :

1.4mm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 2.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Number of Channels :

1

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain Current-Max (Abs) (ID) :

4A

JESD-609 Code :

e3

Turn-Off Delay Time :

9.9 ns

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Turn On Delay Time :

2.65 ns

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

277pF @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 4.5V