ZXMN2B14FHTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

JESD-609 Code :

e3

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Turn-Off Delay Time :

30 ns

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Length :

3.04mm

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Terminations :

3

Power Dissipation-Max :

1W Ta

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.5W

Resistance :

55mOhm

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

4.3A

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

55m Ω @ 3.5A, 4.5V

Factory Lead Time :

17 Weeks

Weight :

7.994566mg

FET Type :

N-Channel

Radiation Hardening :

No

Rise Time :

5.2ns

Pin Count :

3

Fall Time (Typ) :

5.2 ns

REACH SVHC :

No SVHC

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Number of Pins :

3

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Turn On Delay Time :

3.7 ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

8V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

1.02mm

Terminal Position :

Dual

Number of Channels :

1

Width :

1.4mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

872pF @ 10V