ZXMN2B03E6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.7W

FET Type :

N-Channel

Rise Time :

6.2ns

Continuous Drain Current (ID) :

5.4A

Number of Elements :

1

Number of Pins :

6

Resistance :

40mOhm

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Factory Lead Time :

17 Weeks

Published :

2006

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 4.5V

Number of Channels :

1

Turn-Off Delay Time :

33.9 ns

DS Breakdown Voltage-Min :

20V

Width :

1.8mm

Turn On Delay Time :

4.2 ns

Number of Terminations :

6

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.3A, 4.5V

Weight :

14.996898mg

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

6.2 ns

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

4.3A

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 10V

Pin Count :

6

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.1W Ta

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Vgs (Max) :

±8V

Pbfree Code :

yes

Length :

3.1mm

Radiation Hardening :

No

Package / Case :

SOT-23-6

Height :

1.3mm