ZXMN2A03E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

20V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.1W Ta

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

55m Ω @ 7.2A, 4.5V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Drain-source On Resistance-Max :

0.055Ohm

Additional Feature :

LOW THRESHOLD

Transistor Element Material :

SILICON

Surface Mount :

yes

Vgs (Max) :

±12V

Published :

2012

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

700mV @ 250μA

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

837pF @ 10V

Package / Case :

SOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G6

Terminal Position :

Dual

Mounting Type :

Surface Mount

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

3.7A