ZXMN2A02X8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

700mV @ 250μA

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 10V

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Pin Count :

8

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOW THRESHOLD

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

20m Ω @ 11A, 4.5V

Vgs (Max) :

±20V

FET Type :

N-Channel

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PDSO-G8

Drain Current-Max (Abs) (ID) :

7.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Number of Elements :

1

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.02Ohm

Power Dissipation-Max :

1.1W Ta

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

6.2A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

18.6nC @ 4.5V