ZXMN2A01FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

700mV @ 250μA

Drain-source On Resistance-Max :

0.12Ohm

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

303pF @ 15V

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±12V

Additional Feature :

LOW THRESHOLD

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Rds On (Max) @ Id, Vgs :

120m Ω @ 4A, 4.5V

Pin Count :

3

Number of Elements :

1

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

1.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

2014

Power Dissipation-Max :

625mW Ta

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3