ZXMN2A01FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Surface Mount :

yes

Additional Feature :

LOW THRESHOLD

Drain Current-Max (Abs) (ID) :

1.9A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

700mV @ 250μA

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Transistor Application :

SWITCHING

Published :

2014

JESD-30 Code :

R-PDSO-G3

Rds On (Max) @ Id, Vgs :

120m Ω @ 4A, 4.5V

Power Dissipation-Max :

625mW Ta

Transistor Element Material :

SILICON

Terminal Position :

Dual

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pin Count :

3

Drain-source On Resistance-Max :

0.12Ohm

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

20V

Vgs (Max) :

±12V

Drain to Source Voltage (Vdss) :

20V

Package / Case :

TO-236-3, SC-59, SOT-23-3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

303pF @ 15V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V