ZXMN2A01FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

120m Ω @ 4A, 4.5V

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Weight :

7.994566mg

Width :

1.4mm

Turn On Delay Time :

2.49 ns

Threshold Voltage :

700mV

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Length :

3.04mm

JESD-609 Code :

e3

FET Type :

N-Channel

Resistance :

120mOhm

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

17 Weeks

Radiation Hardening :

No

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Terminal Form :

Gull wing

Power Dissipation-Max :

625mW Ta

Voltage - Rated DC :

20V

Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Additional Feature :

LOW THRESHOLD

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

700mV @ 250μA

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

5.21 ns

Input Capacitance (Ciss) (Max) @ Vds :

303pF @ 15V

Pbfree Code :

yes

Height :

1.1mm

Number of Channels :

1

Drain to Source Breakdown Voltage :

20V

Pin Count :

3

Turn-Off Delay Time :

7.47 ns

Max Junction Temperature (Tj) :

150°C

Number of Pins :

3

Published :

2002

Current Rating :

2.09A

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Terminal Position :

Dual

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Rise Time :

5.21ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Continuous Drain Current (ID) :

2.2A