ZXMN10B08E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Power Dissipation-Max :

1.1W Ta

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

497pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

Transistor Application :

SWITCHING

Voltage - Rated DC :

100V

Pulsed Drain Current-Max (IDM) :

9A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

2.1ns

Current Rating :

1.9A

Lead Free :

Lead Free

ECCN Code :

EAR99

Power Dissipation :

1.1W

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

12.1 ns

Number of Elements :

1

Continuous Drain Current (ID) :

1.6A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.23Ohm

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-G6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

230m Ω @ 1.6A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

2.1 ns

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

LOW THRESHOLD

Terminal Form :

Gull wing

Number of Terminations :

6

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Published :

2012