ZXMN10A25K

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Case Connection :

DRAIN

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Transistor Element Material :

SILICON

Number of Channels :

1

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4.2A

Factory Lead Time :

17 Weeks

Power Dissipation-Max :

2.11W Ta

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

859pF @ 50V

Height :

2.39mm

Fall Time (Typ) :

9.4 ns

Drain to Source Breakdown Voltage :

100V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Radiation Hardening :

No

Turn On Delay Time :

4.9 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.9A, 10V

Rise Time :

3.7ns

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

17.7 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Published :

2002

Length :

6.73mm

Gate to Source Voltage (Vgs) :

20V

Resistance :

125mOhm

Gate Charge (Qg) (Max) @ Vgs :

17.16nC @ 10V

Width :

6.22mm

ECCN Code :

EAR99

Lead Free :

Lead Free

Vgs (Max) :

±20V

Termination :

SMD/SMT

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Dual Supply Voltage :

100V

Pbfree Code :

No

Threshold Voltage :

4V

Power Dissipation :

9.85W

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Number of Elements :

1

Nominal Vgs :

4 V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6.4A