ZXMN10A25GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation :

3.9W

Turn On Delay Time :

4.9 ns

Package / Case :

TO-261-4, TO-261AA

Drain Current-Max (Abs) (ID) :

2.9A

Radiation Hardening :

No

JESD-30 Code :

R-PDSO-G4

Resistance :

125mOhm

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Height :

1.65mm

Mount :

Surface Mount

Continuous Drain Current (ID) :

4A

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

No

Terminal Position :

Dual

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

2W Ta

Width :

3.7mm

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

17 Weeks

Published :

2006

Case Connection :

DRAIN

Turn-Off Delay Time :

18 ns

ECCN Code :

EAR99

Rise Time :

3.7ns

Additional Feature :

FAST SWITCHING

Fall Time (Typ) :

9.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

FET Type :

N-Channel

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

859pF @ 50V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

JESD-609 Code :

e3

Number of Terminations :

4

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Length :

6.7mm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.9A, 10V

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Element Configuration :

Single

Number of Elements :

1

Weight :

7.994566mg