ZVN2535ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSIP-W3

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

700mW Ta

Fall Time (Typ) :

7 ns

Weight :

453.59237mg

Voltage - Rated DC :

350V

Rise Time :

7ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 25V

Drain Current-Max (Abs) (ID) :

0.09A

Number of Channels :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Turn On Delay Time :

7 ns

Package / Case :

E-Line-3

Drain-source On Resistance-Max :

40Ohm

Number of Elements :

1

Continuous Drain Current (ID) :

90mA

Turn-Off Delay Time :

16 ns

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Lead Free :

Lead Free

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3V @ 1mA

Mount :

Through Hole

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

90mA Ta

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Power Dissipation :

700mW

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Current Rating :

90mA

Rds On (Max) @ Id, Vgs :

35 Ω @ 100mA, 10V

Terminal Form :

Wire

Drain to Source Breakdown Voltage :

350V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified