ZVN2110ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Published :

2012

Turn-Off Delay Time :

13 ns

Terminal Form :

Wire

Drain-source On Resistance-Max :

4Ohm

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-W3

Rise Time :

8ns

Continuous Drain Current (ID) :

320mA

Number of Elements :

1

Pin Count :

3

FET Type :

N-Channel

JESD-609 Code :

e3

Element Configuration :

Single

Power Dissipation-Max :

700mW Ta

Current Rating :

230mA

Rds On (Max) @ Id, Vgs :

4 Ω @ 1A, 10V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

E-Line-3

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Power Dissipation :

700mW

Fall Time (Typ) :

8 ns

Current - Continuous Drain (Id) @ 25°C :

320mA Ta

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

0.32A

Turn On Delay Time :

7 ns

Weight :

453.59237mg

Drain to Source Breakdown Voltage :

100V

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Voltage - Rated DC :

100V

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V