ZVN2106A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

700mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

4.77mm

Voltage - Rated DC :

60V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Current Rating :

450mA

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Factory Lead Time :

17 Weeks

Peak Reflow Temperature (Cel) :

260

Height :

4.01mm

Width :

2.41mm

Number of Pins :

3

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Threshold Voltage :

2.4V

Drain to Source Breakdown Voltage :

60V

Published :

2006

Number of Channels :

1

Element Configuration :

Single

Terminal Position :

BOTTOM

Pbfree Code :

yes

ECCN Code :

EAR99

Resistance :

2Ohm

Radiation Hardening :

No

Feedback Cap-Max (Crss) :

20 pF

Packaging :

Bulk

Continuous Drain Current (ID) :

450mA

Power Dissipation-Max :

700mW Ta

Weight :

453.59237mg

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-609 Code :

e3

Terminal Form :

Wire

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 18V

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

Lead Free :

Lead Free

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.45A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant