ZVN2106ASTZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Weight :

453.59237mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

Terminal Form :

Wire

Mount :

Through Hole

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 18V

Height :

4.01mm

Number of Terminations :

3

Mounting Type :

Through Hole

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Lead Free :

Lead Free

Power Dissipation-Max :

700mW Ta

Factory Lead Time :

17 Weeks

Length :

4.77mm

Resistance :

2Ohm

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

REACH SVHC :

No SVHC

Power Dissipation :

700mW

Operating Mode :

ENHANCEMENT MODE

Published :

2012

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

2.41mm

JESD-609 Code :

e3

Current Rating :

450mA

Voltage - Rated DC :

60V

Continuous Drain Current (ID) :

450mA

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

60V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

Package / Case :

E-Line-3

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Drain Current-Max (Abs) (ID) :

0.45A