ZVN2120A

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Terminal Position :

BOTTOM

Power Dissipation :

700mW

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

O-PBCY-W3

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

200V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3V @ 1mA

Element Configuration :

Single

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

10 Ω @ 250mA, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Weight :

453.59237mg

Power Dissipation-Max :

700mW Ta

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Terminal Finish :

MATTE TIN

RoHS Status :

RoHS Compliant

Number of Elements :

1

Current Rating :

180mA

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Pin Count :

3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

20 ns

Continuous Drain Current (ID) :

180mA

Terminal Form :

Wire

Number of Terminations :

3

Feedback Cap-Max (Crss) :

7 pF

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Vgs (Max) :

±20V

Voltage - Rated DC :

200V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Rise Time :

8ns

Turn On Delay Time :

8 ns

FET Type :

N-Channel

JESD-609 Code :

e3