ZVN2106GTC
- Mfr.Part #
- ZVN2106GTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 710MA SOT223
- Stock
- 25,185
- In Stock :
- 25,185
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Mount :
- Surface Mount
- Current Rating :
- 710mA
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Pin Count :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 75pF @ 18V
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 12 ns
- Weight :
- 7.994566mg
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Length :
- 6.7mm
- Power Dissipation-Max :
- 2W Ta
- Published :
- 2006
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 2W
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 15 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- JESD-30 Code :
- R-PDSO-G4
- Width :
- 3.7mm
- Current - Continuous Drain (Id) @ 25°C :
- 710mA Ta
- Continuous Drain Current (ID) :
- 710mA
- Drain-source On Resistance-Max :
- 2Ohm
- Height :
- 1.65mm
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 7 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Rise Time :
- 8ns
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- RoHS Compliant
- Datasheets
- ZVN2106GTC

N-Channel Tape & Reel (TR) 2 Ω @ 1A, 10V ±20V 75pF @ 18V TO-261-4, TO-261AA
ZVN2106GTC Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 75pF @ 18V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 710mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 12 ns.Peak drain current is 8A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
ZVN2106GTC Features
a continuous drain current (ID) of 710mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 12 ns
based on its rated peak drain current 8A.
ZVN2106GTC Applications
There are a lot of Diodes Incorporated
ZVN2106GTC applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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