ZVN2110GTC
- Mfr.Part #
- ZVN2110GTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 500MA SOT223
- Stock
- 5,601
- In Stock :
- 5,601
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 500mA
- JESD-30 Code :
- R-PDSO-G4
- Number of Channels :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 100V
- Width :
- 3.7mm
- Qualification Status :
- Not Qualified
- Length :
- 6.7mm
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 100V
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- Single
- Turn-Off Delay Time :
- 8 ns
- Terminal Position :
- Dual
- Turn On Delay Time :
- 4 ns
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Ta
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 1A, 10V
- Drain-source On Resistance-Max :
- 4Ohm
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 75pF @ 25V
- JESD-609 Code :
- e3
- Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Weight :
- 7.994566mg
- Pulsed Drain Current-Max (IDM) :
- 6A
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 1997
- Case Connection :
- DRAIN
- Height :
- 1.65mm
- Rise Time :
- 4ns
- Number of Elements :
- 1
- Additional Feature :
- FAST SWITCHING
- Power Dissipation-Max :
- 2W Ta
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 500mA
- Datasheets
- ZVN2110GTC

N-Channel Tape & Reel (TR) 4 Ω @ 1A, 10V ±20V 75pF @ 25V TO-261-4, TO-261AA
ZVN2110GTC Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 75pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 500mA amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [0.5A] according to its drain current.It is [8 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 6A.A turn-on delay time of 4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
ZVN2110GTC Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 8 ns
based on its rated peak drain current 6A.
ZVN2110GTC Applications
There are a lot of Diodes Incorporated
ZVN2110GTC applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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