ZVN2120ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drain to Source Breakdown Voltage :

200V

Published :

2012

Rise Time :

8ns

Power Dissipation :

700mW

Number of Pins :

3

Vgs (Max) :

±20V

Power Dissipation-Max :

700mW Ta

FET Type :

N-Channel

Turn On Delay Time :

8 ns

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Form :

Wire

Pin Count :

3

Transistor Application :

SWITCHING

Turn-Off Delay Time :

20 ns

Weight :

453.59237mg

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

8 ns

JESD-609 Code :

e3

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Number of Channels :

1

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

10 Ω @ 250mA, 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

180mA

Number of Terminations :

3

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3V @ 1mA

Continuous Drain Current (ID) :

180mA

Package / Case :

E-Line-3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260