ZVN2110A
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- Mfr.Part #
- ZVN2110A
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 320MA TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 2.4V
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 13 ns
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 320mA
- Weight :
- 453.59237mg
- Fall Time (Typ) :
- 8 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 100V
- Published :
- 2012
- Terminal Finish :
- Matte Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 230mA
- Power Dissipation :
- 700mW
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Pin Count :
- 3
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Feedback Cap-Max (Crss) :
- 8 pF
- Height :
- 4.01mm
- Packaging :
- Bulk
- Number of Terminations :
- 3
- Resistance :
- 4Ohm
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Power Dissipation-Max :
- 700mW Ta
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Rise Time :
- 8ns
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 7 ns
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 320mA Ta
- Radiation Hardening :
- No
- Factory Lead Time :
- 17 Weeks
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 75pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 4 Ω @ 1A, 10V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2.41mm
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 4.77mm
- Number of Channels :
- 1
- Datasheets
- ZVN2110A
N-Channel Bulk 4 Ω @ 1A, 10V ±20V 75pF @ 25V TO-226-3, TO-92-3 (TO-226AA)
ZVN2110A Overview
A device's maximum input capacitance is 75pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 320mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 13 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.4V.This device uses no drive voltage (10V) to reduce its overall power consumption.
ZVN2110A Features
a continuous drain current (ID) of 320mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 13 ns
a threshold voltage of 2.4V
ZVN2110A Applications
There are a lot of Diodes Incorporated
ZVN2110A applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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