ZVN2106ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drain-source On Resistance-Max :

2Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Published :

2012

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

450mA Ta

ECCN Code :

EAR99

JESD-30 Code :

R-PSIP-W3

Voltage - Rated DC :

60V

Current Rating :

450mA

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

450mA

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 18V

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

0.45A

Weight :

453.59237mg

Terminal Form :

Wire

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Package / Case :

E-Line-3

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Lead Free :

Lead Free

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Mount :

Through Hole

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

700mW Ta

Power Dissipation :

700mW

Pin Count :

3

Number of Terminations :

3

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

Terminal Finish :

MATTE TIN