ZVN2120GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

200V

Drain to Source Breakdown Voltage :

200V

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Rise Time :

8ns

Turn-Off Delay Time :

20 ns

Terminal Finish :

MATTE TIN

Length :

6.7mm

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Width :

3.7mm

Number of Terminations :

4

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 1mA

Weight :

7.994566mg

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

320mA

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

320mA Ta

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

JESD-30 Code :

R-PDSO-G4

JESD-609 Code :

e3

Fall Time (Typ) :

12 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2W Ta

FET Type :

N-Channel

Turn On Delay Time :

8 ns

Pin Count :

4

Height :

1.65mm

Power Dissipation :

2W

Pulsed Drain Current-Max (IDM) :

2A

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

10 Ω @ 250mA, 10V

Current Rating :

320mA

Terminal Position :

Dual

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.32A