ZTX869
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- Mfr.Part #
- ZTX869
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A E-LINE
- Stock
- 83,226
- In Stock ：
- 83,226
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.2W
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Terminal Form :
- Wire
- Max Collector Current :
- 5A
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~200°C TJ
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 5A
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- NPN
- Package / Case :
- E-Line-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 1V
- Number of Elements :
- 1
- Pin Count :
- 3
- Width :
- 2.41mm
- Voltage - Rated DC :
- 25V
- Continuous Collector Current :
- 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- No
- Length :
- 4.77mm
- Packaging :
- Bulk
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 180mV
- Height :
- 4.01mm
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 1.2W
- Collector Emitter Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 25V
- Published :
- 2006
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Through Hole
- Weight :
- 453.59237mg
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 100mA, 5A
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- ZTX869
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX869 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 1A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 180mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 100mA, 5A.Single BJT transistor is recommended to keep the continuous collector voltage at 5A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
ZTX869 Features
the DC current gain for this device is 300 @ 1A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 100mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
ZTX869 Applications
There are a lot of Diodes Incorporated
ZTX869 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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