ZTX851STZ
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- Mfr.Part #
- ZTX851STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A E-LINE
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Frequency :
- 130MHz
- Weight :
- 453.59237mg
- Number of Pins :
- 3
- Published :
- 2006
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 1.2W
- hFE Min :
- 75
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 6V
- Continuous Collector Current :
- 5A
- Current Rating :
- 5A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~200°C TJ
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Tape and Box (TB)
- Length :
- 4.77mm
- Polarity/Channel Type :
- NPN
- Width :
- 2.41mm
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Power Dissipation :
- 1.2W
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- Package / Case :
- E-Line-3, Formed Leads
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transition Frequency :
- 130MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 250mV
- Base Part Number :
- ZTX851
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 200mA, 5A
- Gain Bandwidth Product :
- 130MHz
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 150V
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Height :
- 4.01mm
- Max Collector Current :
- 5A
- Datasheets
- ZTX851STZ
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NPN -55°C~200°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX851STZ Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 200mA, 5A.A 5A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
ZTX851STZ Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 130MHz
ZTX851STZ Applications
There are a lot of Diodes Incorporated
ZTX851STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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