ZTX851
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- Mfr.Part #
- ZTX851
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A E-LINE
- Stock
- 16
- In Stock ：
- 16
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Frequency :
- 130MHz
- Max Collector Current :
- 5A
- Height :
- 4.01mm
- Radiation Hardening :
- No
- Length :
- 4.77mm
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 200mA, 5A
- Transistor Type :
- NPN
- Transition Frequency :
- 130MHz
- Operating Temperature :
- -55°C~200°C TJ
- Published :
- 2006
- Weight :
- 453.59237mg
- Continuous Collector Current :
- 5A
- Terminal Form :
- Wire
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 130MHz
- Mount :
- Through Hole
- Current Rating :
- 5A
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 1.2W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Manufacturer Package Identifier :
- E-Line
- Pin Count :
- 3
- Width :
- 2.41mm
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 1.2W
- Voltage - Rated DC :
- 60V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- E-Line-3
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 180mV
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Collector Base Voltage (VCBO) :
- 150V
- Base Part Number :
- ZTX851
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZTX851
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX851 Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 200mA, 5A.Maintaining the continuous collector voltage at 5A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).130MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.
ZTX851 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 250mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 130MHz
ZTX851 Applications
There are a lot of Diodes Incorporated
ZTX851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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