ZTX851
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- Mfr.Part #
- ZTX851
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A E-LINE
- Stock
- 16
- In Stock ：
- 16
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 200mA, 5A
- Mount :
- Through Hole
- Continuous Collector Current :
- 5A
- Gain Bandwidth Product :
- 130MHz
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 180mV
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- Transition Frequency :
- 130MHz
- Base Part Number :
- ZTX851
- Operating Temperature :
- -55°C~200°C TJ
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Packaging :
- Bulk
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Weight :
- 453.59237mg
- Number of Pins :
- 3
- Power Dissipation :
- 1.2W
- Manufacturer Package Identifier :
- E-Line
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Length :
- 4.77mm
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 150V
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 130MHz
- Terminal Form :
- Wire
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 5A
- Collector Emitter Voltage (VCEO) :
- 60V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Published :
- 2006
- Package / Case :
- E-Line-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Max Collector Current :
- 5A
- Number of Terminations :
- 3
- Width :
- 2.41mm
- Max Power Dissipation :
- 1.2W
- Radiation Hardening :
- No
- Height :
- 4.01mm
- Datasheets
- ZTX851
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX851 Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 200mA, 5A.Maintaining the continuous collector voltage at 5A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).130MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.
ZTX851 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 250mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 130MHz
ZTX851 Applications
There are a lot of Diodes Incorporated
ZTX851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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