ZTX851
- Mfr.Part #
- ZTX851
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A E-LINE
- Stock
- 16
- In Stock :
- 16
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Weight :
- 453.59237mg
- Current Rating :
- 5A
- Power Dissipation :
- 1.2W
- Length :
- 4.77mm
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 200mA, 5A
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Base Part Number :
- ZTX851
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 180mV
- Collector Base Voltage (VCBO) :
- 150V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 130MHz
- Height :
- 4.01mm
- Width :
- 2.41mm
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~200°C TJ
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Element Configuration :
- Single
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 6V
- Continuous Collector Current :
- 5A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Package / Case :
- E-Line-3
- Transition Frequency :
- 130MHz
- Mount :
- Through Hole
- Packaging :
- Bulk
- Max Power Dissipation :
- 1.2W
- Max Collector Current :
- 5A
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Frequency :
- 130MHz
- Manufacturer Package Identifier :
- E-Line
- Voltage - Rated DC :
- 60V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- ZTX851
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX851 Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 200mA, 5A.Maintaining the continuous collector voltage at 5A is essential for high efficiency.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).130MHz is present in the transition frequency.Maximum collector currents can be below 5A volts.
ZTX851 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 250mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 130MHz
ZTX851 Applications
There are a lot of Diodes Incorporated
ZTX851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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