ZTX855STOA

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Mfr.Part #
ZTX855STOA
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS NPN 150V 4A E-LINE
Stock
11,974
In Stock :
11,974

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Form :
Wire
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 5V
Transistor Application :
SWITCHING
Transistor Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Finish :
MATTE TIN
Terminal Position :
Single
Vce Saturation (Max) @ Ib, Ic :
260mV @ 400mA, 4A
Reach Compliance Code :
Unknown
Qualification Status :
Not Qualified
HTS Code :
8541.29.00.75
Package / Case :
E-Line-3
Current - Collector Cutoff (Max) :
50nA ICBO
Peak Reflow Temperature (Cel) :
260
Current - Collector (Ic) (Max) :
4A
Frequency - Transition :
90MHz
Surface Mount :
No
Transistor Element Material :
SILICON
Pin Count :
3
JESD-30 Code :
R-PSIP-W3
Power - Max :
1.2W
Transition Frequency :
90MHz
JESD-609 Code :
e3
Operating Temperature :
-55°C~200°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2012
Polarity/Channel Type :
NPN
Mounting Type :
Through Hole
ECCN Code :
EAR99
Number of Terminations :
3
Configuration :
Single
Number of Elements :
1
Voltage - Collector Emitter Breakdown (Max) :
150V
Packaging :
Tape and Reel (TR)
Base Part Number :
ZTX855
Datasheets
ZTX855STOA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX855STOA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:E-Line-3, Operating Temperature:-55°C~200°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:ZTX855, ZTX855STOA pinout, ZTX855STOA datasheet PDF, ZTX855STOA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX855STOA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX855STOA


NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Tape & Reel (TR) Through Hole

ZTX855STOA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 260mV @ 400mA, 4A.A transition frequency of 90MHz is present in the part.A 150V maximal voltage - Collector Emitter Breakdown is present in the device.

ZTX855STOA Features


the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 260mV @ 400mA, 4A
a transition frequency of 90MHz


ZTX855STOA Applications


There are a lot of Diodes Incorporated
ZTX855STOA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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