ZTX855STOB
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- Mfr.Part #
- ZTX855STOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 4A E-LINE
- Stock
- 46,631
- In Stock ：
- 46,631
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 150V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Operating Temperature :
- -55°C~200°C TJ
- Reach Compliance Code :
- Unknown
- Package / Case :
- E-Line-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Through Hole
- Base Part Number :
- ZTX855
- Current - Collector (Ic) (Max) :
- 4A
- Published :
- 2012
- Frequency - Transition :
- 90MHz
- RoHS Status :
- RoHS Compliant
- Power - Max :
- 1.2W
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Datasheets
- ZTX855STOB
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NPN -55°C~200°C TJ 50nA ICBO E-Line-3 Tape & Reel (TR) Through Hole
ZTX855STOB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 400mA, 4A.Device displays Collector Emitter Breakdown (150V maximal voltage).
ZTX855STOB Features
the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 260mV @ 400mA, 4A
ZTX855STOB Applications
There are a lot of Diodes Incorporated
ZTX855STOB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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