ZTX849
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- Mfr.Part #
- ZTX849
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 5A E-LINE
- Stock
- 28,470
- In Stock ：
- 28,470
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.41mm
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~200°C TJ
- Max Power Dissipation :
- 1.2W
- Transistor Application :
- SWITCHING
- Manufacturer Package Identifier :
- E-Line
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 200mA, 5A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mount :
- Through Hole
- Published :
- 2006
- Voltage - Rated DC :
- 30V
- Terminal Form :
- Wire
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Transistor Type :
- NPN
- Continuous Collector Current :
- 5A
- Current Rating :
- 5A
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Power Dissipation :
- 1.2W
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Weight :
- 453.59237mg
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 4.01mm
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 5A
- Package / Case :
- E-Line-3
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Base Part Number :
- ZTX849
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Saturation Voltage :
- 180mV
- Length :
- 4.77mm
- Datasheets
- ZTX849
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX849 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.The collector emitter saturation voltage is 180mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 100MHz.A maximum collector current of 5A volts can be achieved.
ZTX849 Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
ZTX849 Applications
There are a lot of Diodes Incorporated
ZTX849 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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