ZTX849

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Saturation Voltage :

180mV

Pbfree Code :

No

Package / Case :

E-Line-3

Max Power Dissipation :

1.2W

Continuous Collector Current :

5A

Transition Frequency :

100MHz

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

30V

Current Rating :

5A

REACH SVHC :

No SVHC

Weight :

453.59237mg

Width :

2.41mm

ECCN Code :

EAR99

Packaging :

Bulk

Mounting Type :

Through Hole

Number of Elements :

1

Frequency :

100MHz

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Height :

4.01mm

Lead Free :

Lead Free

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 1V

Vce Saturation (Max) @ Ib, Ic :

220mV @ 200mA, 5A

Transistor Element Material :

SILICON

Power Dissipation :

1.2W

Polarity/Channel Type :

NPN

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

30V

Terminal Form :

Wire

Mount :

Through Hole

Max Collector Current :

5A

Factory Lead Time :

15 Weeks

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

6V

Manufacturer Package Identifier :

E-Line

Operating Temperature :

-55°C~200°C TJ

JESD-609 Code :

e3

Published :

2006

Terminal Position :

BOTTOM

Current - Collector Cutoff (Max) :

50nA ICBO

Voltage - Rated DC :

30V

Transistor Application :

SWITCHING

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

80V

Length :

4.77mm

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

ZTX849