ZTX849STOB
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- Mfr.Part #
- ZTX849STOB
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 30V 5A E-LINE
- Stock
- 27,057
- In Stock ：
- 27,057
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- HTS Code :
- 8541.29.00.75
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2016
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 453.59237mg
- Max Collector Current :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Qualification Status :
- Not Qualified
- Length :
- 4.77mm
- Max Power Dissipation :
- 1.2W
- Height :
- 4.01mm
- Voltage - Rated DC :
- 30V
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- E-Line-3, Formed Leads
- Continuous Collector Current :
- 5A
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- Width :
- 2.41mm
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Wire
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 200mA, 5A
- Base Part Number :
- ZTX849
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 220mV
- Pin Count :
- 3
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-30 Code :
- R-PSIP-W3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Current Rating :
- 5A
- Datasheets
- ZTX849STOB
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3, Formed Leads Tape & Reel (TR) Through Hole
ZTX849STOB Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 1V.When VCE saturation is 220mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 100MHz.A maximum collector current of 5A volts can be achieved.
ZTX849STOB Features
the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 220mV @ 200mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 100MHz
ZTX849STOB Applications
There are a lot of Diodes Incorporated
ZTX849STOB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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