ZTX853STZ
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- Mfr.Part #
- ZTX853STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A E-LINE
- Stock
- 37,444
- In Stock ：
- 37,444
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Package / Case :
- E-Line-3
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 4A
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- 4A
- Length :
- 4.77mm
- Gain Bandwidth Product :
- 130MHz
- Transition Frequency :
- 130MHz
- Width :
- 2.41mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Frequency :
- 130MHz
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 160mV
- Element Configuration :
- Single
- Weight :
- 453.59237mg
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 400mA, 4A
- Collector Base Voltage (VCBO) :
- 200V
- Pbfree Code :
- No
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1.2W
- Base Part Number :
- ZTX853
- Collector Emitter Breakdown Voltage :
- 100V
- Max Collector Current :
- 4A
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Wire
- Operating Temperature :
- -55°C~200°C TJ
- Height :
- 4.01mm
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- Mount :
- Through Hole
- Max Power Dissipation :
- 1.2W
- Lead Free :
- Lead Free
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- ZTX853STZ
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Tape & Box (TB) Through Hole
ZTX853STZ Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 160mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 4A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.In this part, there is a transition frequency of 130MHz.The maximum collector current is 4A volts.
ZTX853STZ Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 130MHz
ZTX853STZ Applications
There are a lot of Diodes Incorporated
ZTX853STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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