ZTX853
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- Mfr.Part #
- ZTX853
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A E-LINE
- Stock
- 2,734
- In Stock ：
- 2,734
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Height :
- 4.01mm
- Factory Lead Time :
- 15 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Transition Frequency :
- 130MHz
- Collector Emitter Breakdown Voltage :
- 100V
- Published :
- 2012
- Transistor Type :
- NPN
- Frequency :
- 130MHz
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 400mA, 4A
- Transistor Application :
- SWITCHING
- hFE Min :
- 100
- Number of Elements :
- 1
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Package / Case :
- E-Line-3
- Collector Base Voltage (VCBO) :
- 200V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 160mV
- Gain Bandwidth Product :
- 130MHz
- Operating Temperature :
- -55°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Collector Current :
- 4A
- Current Rating :
- 4A
- REACH SVHC :
- No SVHC
- Width :
- 2.41mm
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 453.59237mg
- Max Power Dissipation :
- 1.2W
- Mounting Type :
- Through Hole
- Base Part Number :
- ZTX853
- Packaging :
- Bulk
- Continuous Collector Current :
- 4A
- Power Dissipation :
- 1.2W
- Collector Emitter Voltage (VCEO) :
- 100V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 100V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Manufacturer Package Identifier :
- E-Line
- Length :
- 4.77mm
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 30
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- ZTX853
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX853 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.With a collector emitter saturation voltage of 160mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 130MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
ZTX853 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 130MHz
ZTX853 Applications
There are a lot of Diodes Incorporated
ZTX853 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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