ZTX853
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- Mfr.Part #
- ZTX853
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A E-LINE
- Stock
- 2,734
- In Stock ：
- 2,734
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Temperature :
- -55°C~200°C TJ
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Voltage - Rated DC :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Height :
- 4.01mm
- Lead Free :
- Lead Free
- Terminal Form :
- Wire
- Package / Case :
- E-Line-3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 160mV
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Collector Current :
- 4A
- Published :
- 2012
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Frequency :
- 130MHz
- Width :
- 2.41mm
- Pin Count :
- 3
- Length :
- 4.77mm
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 400mA, 4A
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Manufacturer Package Identifier :
- E-Line
- Current Rating :
- 4A
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 130MHz
- Power Dissipation :
- 1.2W
- Number of Elements :
- 1
- Weight :
- 453.59237mg
- Transition Frequency :
- 130MHz
- hFE Min :
- 100
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Collector Current :
- 4A
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1.2W
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 200V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Base Part Number :
- ZTX853
- Datasheets
- ZTX853
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX853 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.With a collector emitter saturation voltage of 160mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 400mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 130MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
ZTX853 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 130MHz
ZTX853 Applications
There are a lot of Diodes Incorporated
ZTX853 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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