ZTX855

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Mfr.Part #
ZTX855
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS NPN 150V 4A E-LINE
Stock
17,609
In Stock :
17,609

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency :
90MHz
Collector Base Voltage (VCBO) :
250V
Emitter Base Voltage (VEBO) :
6V
Height :
4.01mm
Pin Count :
3
Voltage - Rated DC :
150V
Max Power Dissipation :
1.2W
Peak Reflow Temperature (Cel) :
260
Collector Emitter Voltage (VCEO) :
150V
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
Element Configuration :
Single
Packaging :
Bulk
Mounting Type :
Through Hole
Terminal Finish :
Matte Tin (Sn)
Collector Emitter Saturation Voltage :
210mV
Package / Case :
E-Line-3
Operating Temperature :
-55°C~200°C TJ
Number of Elements :
1
Factory Lead Time :
15 Weeks
Vce Saturation (Max) @ Ib, Ic :
260mV @ 400mA, 4A
Pbfree Code :
No
RoHS Status :
ROHS3 Compliant
Weight :
453.59237mg
Number of Pins :
3
ECCN Code :
EAR99
Gain Bandwidth Product :
90MHz
Polarity/Channel Type :
NPN
Current Rating :
4A
Max Collector Current :
4A
Mount :
Through Hole
Terminal Form :
Wire
Published :
2006
Power Dissipation :
1.2W
REACH SVHC :
No SVHC
Width :
2.41mm
Transition Frequency :
90MHz
Time@Peak Reflow Temperature-Max (s) :
40
Length :
4.77mm
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
150V
Current - Collector Cutoff (Max) :
50nA ICBO
JESD-609 Code :
e3
Radiation Hardening :
No
Number of Terminations :
3
Continuous Collector Current :
4A
Datasheets
ZTX855
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX855 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:E-Line-3, Operating Temperature:-55°C~200°C TJ, Number of Pins:3, Number of Terminations:3, ZTX855 pinout, ZTX855 datasheet PDF, ZTX855 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX855 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX855


NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole

ZTX855 Overview


DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 90MHz.In extreme cases, the collector current can be as low as 4A volts.

ZTX855 Features


the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz


ZTX855 Applications


There are a lot of Diodes Incorporated
ZTX855 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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