ZTX855
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- Mfr.Part #
- ZTX855
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 4A E-LINE
- Stock
- 17,609
- In Stock ：
- 17,609
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 90MHz
- Collector Base Voltage (VCBO) :
- 250V
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 4.01mm
- Pin Count :
- 3
- Voltage - Rated DC :
- 150V
- Max Power Dissipation :
- 1.2W
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 150V
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- 210mV
- Package / Case :
- E-Line-3
- Operating Temperature :
- -55°C~200°C TJ
- Number of Elements :
- 1
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 453.59237mg
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 90MHz
- Polarity/Channel Type :
- NPN
- Current Rating :
- 4A
- Max Collector Current :
- 4A
- Mount :
- Through Hole
- Terminal Form :
- Wire
- Published :
- 2006
- Power Dissipation :
- 1.2W
- REACH SVHC :
- No SVHC
- Width :
- 2.41mm
- Transition Frequency :
- 90MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 4.77mm
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 150V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Continuous Collector Current :
- 4A
- Datasheets
- ZTX855
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX855 Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 90MHz.In extreme cases, the collector current can be as low as 4A volts.
ZTX855 Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz
ZTX855 Applications
There are a lot of Diodes Incorporated
ZTX855 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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