ZTX855
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- Mfr.Part #
- ZTX855
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 4A E-LINE
- Stock
- 17,609
- In Stock ：
- 17,609
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 150V
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 90MHz
- Pin Count :
- 3
- Max Power Dissipation :
- 1.2W
- Package / Case :
- E-Line-3
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Current Rating :
- 4A
- Published :
- 2006
- Max Collector Current :
- 4A
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 250V
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Operating Temperature :
- -55°C~200°C TJ
- Height :
- 4.01mm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.41mm
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 90MHz
- Collector Emitter Breakdown Voltage :
- 150V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 150V
- Terminal Form :
- Wire
- Power Dissipation :
- 1.2W
- Collector Emitter Saturation Voltage :
- 210mV
- Weight :
- 453.59237mg
- Continuous Collector Current :
- 4A
- Mounting Type :
- Through Hole
- Length :
- 4.77mm
- Frequency :
- 90MHz
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Datasheets
- ZTX855
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX855 Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 90MHz.In extreme cases, the collector current can be as low as 4A volts.
ZTX855 Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz
ZTX855 Applications
There are a lot of Diodes Incorporated
ZTX855 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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