ZTX855
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- Mfr.Part #
- ZTX855
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 4A E-LINE
- Stock
- 17,609
- In Stock ：
- 17,609
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- E-Line-3
- Terminal Form :
- Wire
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Collector Emitter Voltage (VCEO) :
- 150V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Transition Frequency :
- 90MHz
- Frequency :
- 90MHz
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 250V
- Height :
- 4.01mm
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 150V
- Max Power Dissipation :
- 1.2W
- Factory Lead Time :
- 15 Weeks
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Width :
- 2.41mm
- Collector Emitter Breakdown Voltage :
- 150V
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- No
- Weight :
- 453.59237mg
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Operating Temperature :
- -55°C~200°C TJ
- Length :
- 4.77mm
- Power Dissipation :
- 1.2W
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 6V
- Gain Bandwidth Product :
- 90MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 4A
- Collector Emitter Saturation Voltage :
- 210mV
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Datasheets
- ZTX855
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX855 Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 400mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 90MHz.In extreme cases, the collector current can be as low as 4A volts.
ZTX855 Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz
ZTX855 Applications
There are a lot of Diodes Incorporated
ZTX855 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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