ZTX857STZ

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Transition Frequency :

80MHz

Emitter Base Voltage (VEBO) :

6V

Height :

4.01mm

Current - Collector Cutoff (Max) :

1μA ICBO

Max Power Dissipation :

1.2W

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

330V

Peak Reflow Temperature (Cel) :

260

Frequency :

80MHz

Factory Lead Time :

15 Weeks

Lead Free :

Lead Free

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Max Breakdown Voltage :

300V

Power Dissipation :

1.2W

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

250mV @ 600mA, 3A

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 10V

Polarity/Channel Type :

NPN

Weight :

453.59237mg

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

300V

Number of Pins :

3

Mount :

Surface Mount, Through Hole

Transistor Application :

SWITCHING

Base Part Number :

ZTX857

Terminal Form :

Wire

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~200°C TJ

JESD-609 Code :

e3

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

250mV

Pbfree Code :

No

Current Rating :

5A

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Gain Bandwidth Product :

80MHz

Collector Emitter Breakdown Voltage :

300V

Number of Terminations :

3

Width :

2.41mm

Package / Case :

E-Line-3, Formed Leads

Length :

4.77mm

Transistor Type :

NPN

Packaging :

Tape and Box (TB)

Continuous Collector Current :

3A

Voltage - Rated DC :

300V

Max Collector Current :

3A