ZTX857
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- Mfr.Part #
- ZTX857
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 3A E-LINE
- Stock
- 5,539
- In Stock ：
- 5,539
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Width :
- 2.41mm
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 300V
- Length :
- 4.77mm
- Max Power Dissipation :
- 1.2W
- Frequency :
- 80MHz
- Current Rating :
- 5A
- Height :
- 4.01mm
- Package / Case :
- E-Line-3
- Pbfree Code :
- No
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Continuous Collector Current :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2012
- Gain Bandwidth Product :
- 80MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 330V
- Transition Frequency :
- 80MHz
- Base Part Number :
- ZTX857
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 300V
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 600mA, 3A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.2W
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Number of Terminations :
- 3
- Weight :
- 453.59237mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 300V
- Operating Temperature :
- -55°C~200°C TJ
- Datasheets
- ZTX857
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Bulk Through Hole
ZTX857 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 600mA, 3A.Continuous collector voltages of 3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 3A volts.
ZTX857 Features
the DC current gain for this device is 100 @ 500mA 10V
the vce saturation(Max) is 250mV @ 600mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is 5A
a transition frequency of 80MHz
ZTX857 Applications
There are a lot of Diodes Incorporated
ZTX857 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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