ZTX855STZ
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- Mfr.Part #
- ZTX855STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 4A E-LINE
- Stock
- 16,708
- In Stock ：
- 16,708
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Gain Bandwidth Product :
- 90MHz
- Current Rating :
- 4A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~200°C TJ
- Factory Lead Time :
- 15 Weeks
- Voltage - Rated DC :
- 150V
- Vce Saturation (Max) @ Ib, Ic :
- 260mV @ 400mA, 4A
- Base Part Number :
- ZTX855
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.41mm
- Mount :
- Through Hole
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 150V
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 150V
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 250V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Wire
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Weight :
- 453.59237mg
- Height :
- 4.01mm
- Continuous Collector Current :
- 4A
- Published :
- 2006
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 210mV
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- HTS Code :
- 8541.29.00.75
- Number of Terminations :
- 3
- Length :
- 4.77mm
- Transition Frequency :
- 90MHz
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Package / Case :
- E-Line-3
- Max Power Dissipation :
- 1.2W
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Datasheets
- ZTX855STZ
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NPN -55°C~200°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN E-Line-3 Tape & Box (TB) Through Hole
ZTX855STZ Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 260mV @ 400mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 90MHz.A maximum collector current of 4A volts is possible.
ZTX855STZ Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is 4A
a transition frequency of 90MHz
ZTX855STZ Applications
There are a lot of Diodes Incorporated
ZTX855STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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