TK14E65W,S1X
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- Mfr.Part #
- TK14E65W,S1X
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 13.7A TO220
- Stock
- 1,140
- In Stock ：
- 1,140
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 650V
- Vgs(th) (Max) @ Id :
- 3.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 6.9A, 10V
- Series :
- DTMOSIV
- Turn-Off Delay Time :
- 110 ns
- Current - Continuous Drain (Id) @ 25°C :
- 13.7A Ta
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 60 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Rise Time :
- 20ns
- Weight :
- 6.000006g
- Element Configuration :
- Single
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 13.7A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Published :
- 2014
- Power Dissipation-Max :
- 130W Tc
- FET Type :
- N-Channel
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 300V
- Factory Lead Time :
- 16 Weeks
- Fall Time (Typ) :
- 7 ns
- Number of Channels :
- 1
- Package / Case :
- TO-220-3
- Operating Temperature :
- 150°C TJ
- Datasheets
- TK14E65W,S1X
N-Channel Tube 250m Ω @ 6.9A, 10V ±30V 1300pF @ 300V 35nC @ 10V TO-220-3
TK14E65W,S1X Overview
A device's maximum input capacitance is 1300pF @ 300V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 13.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 60 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
TK14E65W,S1X Features
a continuous drain current (ID) of 13.7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 110 ns
TK14E65W,S1X Applications
There are a lot of Toshiba Semiconductor and Storage
TK14E65W,S1X applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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