TK14A65W,S5X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 690µA

Drain to Source Voltage (Vdss) :

650V

Max Operating Temperature :

150°C

Power Dissipation-Max :

40W Tc

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

220mOhm

Mount :

Through Hole

Rise Time :

20ns

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

110 ns

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 300V

Turn On Delay Time :

60 ns

Drain to Source Breakdown Voltage :

650V

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Published :

2004

Element Configuration :

Single

Series :

DTMOSIV

Supplier Device Package :

TO-220SIS

Input Capacitance :

1.3nF

Min Operating Temperature :

-55°C

Fall Time (Typ) :

7 ns

Rds On (Max) @ Id, Vgs :

250mOhm @ 6.9A, 10V

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Weight :

6.000006g

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

13.7A

FET Type :

N-Channel

Rds On Max :

250 mΩ

Current - Continuous Drain (Id) @ 25°C :

13.7A Ta

Packaging :

Tube

RoHS Status :

RoHS Compliant

Number of Channels :

1