TK14N65W,S1F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Number of Channels :

1

Radiation Hardening :

No

Rise Time :

20ns

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Power Dissipation-Max :

130W Tc

Package / Case :

TO-247-3

Turn-Off Delay Time :

110 ns

Packaging :

Tube

Supplier Device Package :

TO-247

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Input Capacitance :

1.3nF

Drain to Source Voltage (Vdss) :

650V

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Rds On Max :

250 mΩ

Continuous Drain Current (ID) :

13.7A

Vgs(th) (Max) @ Id :

3.5V @ 690µA

Drain to Source Resistance :

220mOhm

Turn On Delay Time :

60 ns

Weight :

38.000013g

Current - Continuous Drain (Id) @ 25°C :

13.7A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Fall Time (Typ) :

7 ns

Number of Pins :

3

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

250mOhm @ 6.9A, 10V

Vgs (Max) :

±30V

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Series :

DTMOSIV

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 300V