TK14A65W5,S5X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Packaging :

Tube

Continuous Drain Current (ID) :

13.7A

Series :

DTMOSIV

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Rise Time :

40ns

Supplier Device Package :

TO-220SIS

Published :

2014

Vgs (Max) :

±30V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 690μA

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

40W Tc

Weight :

6.000006g

Mounting Type :

Through Hole

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Input Capacitance :

1.3nF

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

300mOhm @ 6.9A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 300V

Current - Continuous Drain (Id) @ 25°C :

13.7A Ta

Drain to Source Voltage (Vdss) :

650V

Rds On Max :

300 mΩ

Drain to Source Resistance :

250mOhm

Number of Channels :

1

Fall Time (Typ) :

7 ns

Turn On Delay Time :

90 ns

Min Operating Temperature :

-55°C

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

Turn-Off Delay Time :

110 ns

Number of Pins :

3

Element Configuration :

Single