TK14A55D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

550V

Number of Pins :

3

Input Capacitance :

2.3nF

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

370mOhm @ 7A, 10V

Rds On Max :

370 mΩ

Mounting Type :

Through Hole

Fall Time (Typ) :

25 ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Factory Lead Time :

16 Weeks

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

14A

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Rise Time :

50ns

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Power Dissipation-Max :

50W Tc

Published :

2009

Series :

π-MOSVII

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

FET Type :

N-Channel

Supplier Device Package :

TO-220SIS

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

30V