TK14A55D(STA4,Q,M)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel

Max Operating Temperature :

150°C

Rise Time :

50ns

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

370mOhm @ 7A, 10V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

550V

Fall Time (Typ) :

25 ns

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

14A

Supplier Device Package :

TO-220SIS

Min Operating Temperature :

-55°C

Power Dissipation-Max :

50W Tc

Packaging :

Tube

Series :

π-MOSVII

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2009

Factory Lead Time :

16 Weeks

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

2.3nF

Rds On Max :

370 mΩ

Number of Pins :

3