TK14G65W,RQ

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Mfr.Part #
TK14G65W,RQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 13.7A D2PAK
Stock
3,525
In Stock :
3,525

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Cut Tape (CT)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature :
150°C TJ
Vgs (Max) :
±30V
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
3.5V @ 690µA
Current - Continuous Drain (Id) @ 25°C :
13.7A Ta
Drain to Source Voltage (Vdss) :
650V
Continuous Drain Current (ID) :
13.7A
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 300V
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Factory Lead Time :
16 Weeks
Series :
DTMOSIV
FET Type :
N-Channel
Power Dissipation-Max :
130W Tc
Rds On (Max) @ Id, Vgs :
250m Ω @ 6.9A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2014
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Datasheets
TK14G65W,RQ
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK14G65W,RQ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, TK14G65W,RQ pinout, TK14G65W,RQ datasheet PDF, TK14G65W,RQ amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK14G65W,RQ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK14G65W,RQ


N-Channel Cut Tape (CT) 250m Ω @ 6.9A, 10V ±30V 1300pF @ 300V 35nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TK14G65W,RQ Overview


A device's maximal input capacitance is 1300pF @ 300V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13.7A, which represents the maximum continuous current it can conduct.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TK14G65W,RQ Features


a continuous drain current (ID) of 13.7A
a 650V drain to source voltage (Vdss)


TK14G65W,RQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK14G65W,RQ applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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