TK14G65W5,RQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

130W Tc

Vgs (Max) :

±30V

Packaging :

Cut Tape (CT)

Published :

2014

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

1.3nF

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4.5V @ 690μA

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Supplier Device Package :

D2PAK

FET Type :

N-Channel

Continuous Drain Current (ID) :

13.7A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

300mOhm @ 6.9A, 10V

Rds On Max :

300 mΩ

Current - Continuous Drain (Id) @ 25°C :

13.7A Ta

Series :

DTMOSIV

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 300V

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V