TK14C65W5,S1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

250mOhm

Rds On (Max) @ Id, Vgs :

300mOhm @ 6.9A, 10V

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

13.7A Ta

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

1.3nF

FET Type :

N-Channel

Weight :

2.387001g

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 300V

Fall Time (Typ) :

7 ns

Power Dissipation-Max :

130W Tc

Turn-Off Delay Time :

110 ns

Supplier Device Package :

I2PAK

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

650V

Vgs(th) (Max) @ Id :

4.5V @ 690μA

Published :

2014

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

30V

Rds On Max :

300 mΩ

Element Configuration :

Single

Packaging :

Tube

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Mounting Type :

Through Hole

Turn On Delay Time :

90 ns

Continuous Drain Current (ID) :

13.7A

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

DTMOSIV

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Breakdown Voltage :

650V

RoHS Status :

RoHS Compliant

Rise Time :

40ns