DF2B6.8ACT,L3F

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Height :

400μm

Diode Element Material :

SILICON

Max Operating Temperature :

150°C

Reverse Standoff Voltage :

5V

Voltage - Clamping (Max) @ Ipp :

7V Typ

Rep Pk Reverse Voltage-Max :

5V

Pbfree Code :

yes

Current - Peak Pulse (10/1000μs) :

1A 8/20μs

JESD-30 Code :

R-XBCC-N2

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Voltage - Reverse Standoff (Typ) :

5V Max

Type :

Zener

Direction :

Bidirectional

Mount :

Surface Mount

Number of Channels :

1

Capacitance @ Frequency :

9pF @ 1MHz

Package / Case :

SOD-882

Power Line Protection :

No

Capacitance :

9pF

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Clamping Voltage :

7V

Applications :

GENERAL PURPOSE

Factory Lead Time :

12 Weeks

Peak Pulse Current :

1A

Breakdown Voltage :

5.8V

Configuration :

Single