STGB5H60DF

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Mfr.Part #
STGB5H60DF
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRENCH GATE FIELD-STOP IGBT, H S
Stock
1,518
In Stock :
1,518

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Current - Collector Pulsed (Icm) :
20A
Max Breakdown Voltage :
600V
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
20 Weeks
Input Type :
Standard
Collector Emitter Voltage (VCEO) :
1.95V
Reverse Recovery Time :
134.5 ns
Collector Emitter Breakdown Voltage :
600V
IGBT Type :
Trench Field Stop
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Switching Energy :
56μJ (on), 78.5μJ (off)
Max Collector Current :
10A
Base Part Number :
STGB5
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 5A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tape and Reel (TR)
Td (on/off) @ 25°C :
30ns/140ns
Gate Charge :
43nC
Mount :
Surface Mount
Power - Max :
88W
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Test Condition :
400V, 5A, 47 Ω, 15V
Max Power Dissipation :
88W
Datasheets
STGB5H60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGB5H60DF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:STGB5, Operating Temperature:-55°C~175°C TJ, STGB5H60DF pinout, STGB5H60DF datasheet PDF, STGB5H60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGB5H60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGB5H60DF


STGB5H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGB5H60DF Description


STGB5H60DF, a part of the new H series of IGBTs, is a type of  IGBT with an ultrafast soft recovery antiparallel diode. It is developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high switching frequency converters. A safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. 



STGB5H60DF Features


Advanced proprietary trench gate field-stop structure

Positive VCE(sat) temperature coefficient 

Very tight parameter distribution

Low thermal resistance

Ultrafast soft recovery antiparallel diode



STGB5H60DF Applications


Motor control

UPS

PFC


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