STGB10NC60KDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Drain to Source Voltage (Vdss) :

600V

Rise Time :

6ns

Width :

9.35mm

Packaging :

Tape and Reel (TR)

Td (on/off) @ 25°C :

17ns/72ns

Turn On Time :

23 ns

Case Connection :

Isolated

Series :

PowerMESH™

Gate Charge :

19nC

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Length :

10.4mm

Transistor Application :

POWER CONTROL

Collector Emitter Saturation Voltage :

2.5V

Transistor Element Material :

SILICON

Input Type :

Standard

Reverse Recovery Time :

22 ns

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Voltage (VCEO) :

600V

Current Rating :

10A

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

30A

Factory Lead Time :

8 Weeks

Number of Pins :

3

Gate-Emitter Voltage-Max :

20V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Gate-Emitter Thr Voltage-Max :

7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Weight :

2.240009g

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 5A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Turn-Off Delay Time :

72 ns

Terminal Form :

Gull wing

Max Power Dissipation :

65W

Switching Energy :

55μJ (on), 85μJ (off)

Max Collector Current :

20A

Max Breakdown Voltage :

600V

Pin Count :

3

Height :

4.6mm

Continuous Drain Current (ID) :

10A

Voltage - Rated DC :

600V

REACH SVHC :

No SVHC

Test Condition :

390V, 5A, 10 Ω, 15V

Contact Plating :

Tin

Termination :

SMD/SMT

Element Configuration :

Single

Turn Off Time-Nom (toff) :

242 ns

Power - Max :

65W

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

245

Lead Free :

Lead Free

Power Dissipation :

60W

Base Part Number :

STGB10

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

17 ns