STGB14NC60KDT4

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Mfr.Part #
STGB14NC60KDT4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
IGBT 600V 25A 80W D2PAK
Stock
1,773
In Stock :
1,773

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Base Part Number :
STGB14
Factory Lead Time :
8 Weeks
Power Dissipation :
80W
Current - Collector Pulsed (Icm) :
50A
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Mounting Type :
Surface Mount
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 7A
Rise Time :
8.5ns
Max Breakdown Voltage :
600V
Collector Emitter Saturation Voltage :
2.1V
Td (on/off) @ 25°C :
22.5ns/116ns
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Lead Free :
Lead Free
Mount :
Surface Mount
Voltage - Rated DC :
600V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Max Collector Current :
25A
Input Type :
Standard
Series :
PowerMESH™
Collector Emitter Voltage (VCEO) :
600V
Number of Pins :
3
Switching Energy :
82μJ (on), 155μJ (off)
Test Condition :
390V, 7A, 10 Ω, 15V
Width :
9.35mm
Height :
4.6mm
Collector Emitter Breakdown Voltage :
600V
Packaging :
Tape and Reel (TR)
Current Rating :
25A
Gate Charge :
34.4nC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.4mm
Max Power Dissipation :
80W
Reverse Recovery Time :
37 ns
Datasheets
STGB14NC60KDT4
Introducing Transistors - IGBTs - Single STMicroelectronics STGB14NC60KDT4 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:STGB14, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, STGB14NC60KDT4 pinout, STGB14NC60KDT4 datasheet PDF, STGB14NC60KDT4 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGB14NC60KDT4 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGB14NC60KDT4


STGB14NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGB14NC60KDT4 Description

The STGB14NC60KDT4 device is very fast IGBT developed using advanced PowerMESH? technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
STGB14NC60KDT4 Features

● Low on voltage drop (VCE(sat))
● Low Cres / Cies ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery antiparallel diode
● Short-circuit withstand time 10 μs
● ROHS3 Compliant
● Lead Free
STGB14NC60KDT4 Applications

● High frequency inverters
● SMPS and PFC in both hard switch and resonant topologies
● Motor drives
● New Energy Vehicle
● Photovoltaic Generation
● Wind Power Generation
● Smart Grid
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